SK hynix unveils UFS 4.1 on 321 layers of 4D NAND - smaller, faster, with an eye on AI and SSD

Company SK hynix announces new generation of UFS 4.1 flash memory, based on 321-layer 4D NAND. The new solution is aimed at mobile devices, including flagship smartphones, and offers capacities of up to 1 TB with reduced chip thickness and a noticeable increase in performance. The first devices with such memory are expected to appear in the first quarter of 2026., and later it will appear in consumer SSDs.

According to SK hynix, the latest 321-layer chips 15% thinnerthan the previous generation (0,85 mm versus 1,00 mm). At the same time, they provide sequential read speed up to 4300 MB/s — at the level of NVMe SSD Gen 3 — and a significant increase in random operations: 15% faster reading and 40% faster writing. All this with a 7% reduction in energy consumption and optimization for Perform AI tasks directly on the device.

Unlike current 238-layer solutions, the new memory is optimized for on-device AI and mobile computing. SK hynix positions UFS 4.1 as "key technology for AI devices"The company emphasizes that the new generation chips ensure stable operation of local AI even in conditions of limited resources.

The new 321-layer NAND will also be used in SSDs for PCs and data centers. SK hynix plans to introduce SSDs based on these chips under its own brand and as part of OEM products this year, including Adata, Kingston and SolidigmThis versatility will allow the company to strengthen its position in the NAND solutions segment with a focus on AI and high storage density.

While the new UFS 4.1's sequential read speeds haven't improved over its predecessor (both versions are up to 4,3GB/s), its increased density, reduced thickness, and faster random read speeds make it one of the best the most balanced NAND platforms on the marketAt the same time, competitors, including Samsung and Micron, are also working on their own multilayer solutions, with up to 400 layers in the future.