SK hynix introduces HBM4 with 2TB/s throughput
At the technology symposium TSMC North America company SK hynix demonstrated its leadership in the field of next-generation memory by introducing a commercial version to the general public for the first time HBM4While competitors like Micron and Samsung are still in the prototype stage, SK hynix is already preparing for mass production HBM4 in the second half 2025 years.
The HBM4 from SK hynix offers impressive specifications: a volume of up to 48 GB on the stack, throughput up to 2.0 TB/s and the input/output speed is at the level 8.0 Gbps. The company's engineers were able to achieve such a high density by using a 16-layer stack architecture connected using technologies Advanced MR-MUF и TSV (Through Silicon Via). This makes SK hynix a pioneer in such complex memory packaging.
At the same time, a new version was demonstrated HBM3E with 16 layers, providing up to 1.2 TB/s bandwidth. This type of memory is planned for use in future NVIDIA AI clusters, codenamed GB300 "Blackwell Ultra", in anticipation of the transition to HBM4 in the architecture Vera Rubin.
In addition to HBM solutions, SK hynix also showcased its latest server memory modules, including RDIMM и MRDIMM, developed on the basis of DRAM standard 1c. They reach speeds of up to 12,500 MB / s, and MRDIMM models already offer throughput up to 12.8 Gbps in 64, 96 and 256 GB capacities. A 256 GB 3DS RDIMM for high-load data centers was also introduced.
It is obvious that SK hynix is confidently ahead of its competitors in the markets HBM and DRAM, through rapid innovation and close collaboration with industry leaders such as NVIDIA.
